20.Electron Devices by John G. Webster (Editor) PDF

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By John G. Webster (Editor)

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Phys. , 35: 251, 1979. 29. S. R. Forrest, R. G. Smith, and O. K. Kim, IEEE J. Quant. , QE-18: 2040, 1982. 30. K. , InP/InGaAs buried-structure avalanche photodiodes, Electron. , 20: 158–159, 1984. 31. J. C. , High-performance avalanche photodiode with separate absorption ‘‘grading’’ and multiplication regions, Electron. , 19: 818–820, 1983. 32. J. N. Hollenhorst, Frequency response theory for multilayer photodiodes, J. , LT-8: 531–537, 1990. 33. W. T. , A proposed high-frequency, negative-resistance diode, Bell Syst.

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9) goes to zero. Numerically, this involves evaluating the inverse gain as a function of bias and iterating to find the zero. Figure 8 shows the result for uniformly doped one-sided abrupt junctions in Breakdown voltage (V) 10 20 169 1000 n+p GaAs p+n InP 100 n+p Si 10 1015 1016 Carrier concentration (cm–3) 1017 Figure 8. Calculated breakdown voltage versus doping for one-sided abrupt diodes in Si, GaAs, and InP using the ionization coefficients of Fig. 2. The type of the low doped side was chosen so that the predominant carrier has the higher ionization coefficient.

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20.Electron Devices by John G. Webster (Editor)


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